Tytuł:

SiGe HBT wideband amplifier for millimeter wave applications, Journal of Telecommunications and Information Technology, 2007, nr 1

Autor:

Boeck, Georg ; Noether, Nils ; Krcmar, Marko

Temat i słowa kluczowe:

HBT ; wideband amplifier ; millimeter wave ; bipolar integrated circuits ; SiGe

Opis:

A wideband amplifier up to 50 GHz has been implemented in a 0.25 μm, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7×0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author’s best knowledge this is the highest gain bandwidth product of a monolithic SiGe HBT amplifier ever reported.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2007, nr 1

Typ zasobu:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2007.1.742

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności