Tytuł:

Challenges for 10 nm MOSFET process integration, Journal of Telecommunications and Information Technology, 2007, nr 2

Autor:

Hellström, Per-Erik ; Haartman von, Martin ; Östling, Mikael ; Zhang, Zhen ; Hallstedt, Julius ; Zhang, Shili ; Malm, Bengt Gunnar

Temat i słowa kluczowe:

sstrained silicon ; silicon germanium ; hafnium oxide ; high-k dielectrics ; mobility ; low-frequency noise ; nano-wire ; silicon-on-insulator (SOI) ; metal gate

Opis:

An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed. The need for high-k gate dielectrics and a metal gate electrode is discussed. Different techniques for strain-enhanced mobility are discussed. As an example, ultra thin body SOI devices with high mobility SiGe channels are demonstrated.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2007, nr 2

Typ zasobu:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2007.2.805

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności