Title:

The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs, Journal of Telecommunications and Information Technology, 2009, nr 4

Creator:

Raskin, Jean-Pierre ; Vanhoenacker-Janvier, Danielle ; Emam, Mostafa ; Houri, Samer

Subject and Keywords:

SOI MOSFET ; mechanical stress ; piezoresistance coefficient ; intrinsic gain ; cutoff frequency fT

Description:

This paper presents a complete study of the impact of mechanical stress on the performance of SOI MOSFETs. This investigation includes dc, analog and RF characteristics. Parameters of a small-signal equivalent circuit are also ex- tracted as a function of applied mechanical stress. Piezoresistance coefficientis shown to be a key element in describing the enhancement in the characteristics of the device due to mechanical stress.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2009, nr 4

Resource Type:

artykuł

Format:

application/pdf

Resource Identifier:

ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2009.4.957

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności