Object structure
Tytuł:

Analysis of the Dispersion of Electrical Parameters and Characteristics of FinFET Devices, Journal of Telecommunications and Information Technology, 2009, nr 4

Autor:

Jakubowski, Andrzej ; Tomaszewski, Daniel ; Łukasiak, Lidia ; Korwin-Pawlowski, Michael L. ; Malinowski, Arkadiusz ; Sekine, Makoto ; Hori, Masaru

Temat i słowa kluczowe:

plasma etching ; FinFET, line edge roughness, parameter variability, plasma etching, technology computer aided design (TCAD) ; parameter variability ; technology computer aided design (TCAD) ; line edge roughness

Opis:

Extensive numerical simulations of FinFET structures have been carried out using commercial TCAD tools. A series of plasma etching steps has been simulated for different process conditions in order to evaluate the influence of plasma pressure, composition and powering on the FinFET topography. Next, the most important geometric parameters of the FinFETs have been varied and the electrical characteristics have been calculated in order to evaluate the sensitivity of the FinFET electrical parameters on possible FinFET structure variability.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2009, nr 4

Typ zasobu:

artykuł

Format:

application/pdf

Identyfikator zasobu:

ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2009.4.960

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

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