Tytuł:

On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors, Journal of Telecommunications and Information Technology, 2001, nr 1

Autor:

Kogut, Igor ; Maryamova, Inna ; Lavitska, Elena ; Khoverko, Yuri ; Druzhinin, Anatoly

Temat i słowa kluczowe:

SOI ; ZMR ; mechanical sensors ; poly-Si piezoresistor

Opis:

The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si piezoresistors on insulating substrate for operation in different temperature ranges (low, elevated and high temperatures). Laser recrystallization is used as a technological tool to adjust the electrical and piezoresistive parameters of the polysilicon layer.For this purpose a set of studies including numerical simulation and experimental work has been carried out. The main three directions of the studies are considered: problems of thermal stabilization of the pressure sensor performance at elevated and high temperatures; problem of sensor operation at cryogenic temperatures; development of a multifunctional pressure-temperature sensor.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2001, nr 1

Typ zasobu:

artykuł

Format:

application/pdf

Identyfikator zasobu:

ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.44

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności