Tytuł:

An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Autor:

Jakubowski, Andrzej ; Tomaszewski, Daniel ; Łukasiak, Lidia ; Gibki, Jan

Temat i słowa kluczowe:

SOI MOSFET ; displacement current ; avalanche ionization ; recombination ; floating body ; admittance

Opis:

An influence of the selected physical phenomena: impact ionization in silicon and time variation of internal electric field distribution in partially-depleted (PD) SOI MOSFETs on several C-V characteristics of these devices is presented. The role of avalanche multiplication in the socalled „pinch-off” region is discussed in a more detailed way. The analysis is done using a numerical solver of drift-diffusion equations in silicon devices and using an analytical model of the PD SOI MOSFETs. The calculations results exhibit the significance of proper modelling of the phenomena in the floating body area of these devices.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2001, nr 1

Typ zasobu:

artykuł

Format:

application/pdf

Identyfikator zasobu:

ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.40

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności