Tytuł:

An impact of frequency on capacitances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Autor:

Jakubowski, Andrzej ; Tomaszewski, Daniel ; Łukasiak, Lidia ; Zaręba, Agnieszka

Temat i słowa kluczowe:

SOI MOSFET ; small-signal models ; non-quasistaticanalysis ; admittances

Opis:

A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated for a wide range of frequencies, preliminary results of numerical analysis and of measurements and brief analysis of the results are presented. Methods of model improvement are proposed.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2000, nr 3,4

Typ zasobu:

artykuł

Format:

application/pdf

Identyfikator zasobu:

ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2000.3-4.26

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności