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Title: An impact of frequency on capacitances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Autor:

Jakubowski, Andrzej ; Tomaszewski, Daniel ; Łukasiak, Lidia ; Zaręba, Agnieszka

Data wydania:

2000, nr 3,4

Typ zasobu:

artykuł

Opis:

A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated for a wide range of frequencies, preliminary results of numerical analysis and of measurements and brief analysis of the results are presented. Methods of model improvement are proposed.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:1643 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2000.3-4.26

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SOI MOSFET small-signal models non-quasistaticanalysis admittances

Object collections:

Last modified:

25 lut 2026

In our library since:

22 maj 2014

Number of object content hits:

152

All available object's versions:

https://ribes-54.man.poznan.pl/publication/1845

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Edition name Date
Tomaszewski, Daniel; Łukasiak, Lidia; Zaręba, Agnieszka; Jakubowski, Andrzej, An impact of frequency on capacitances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4 25 lut 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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