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Title: Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Autor:

Raskin, Jean-Pierre ; Goffioul, Michël ; Vanhoenacker, Danielle

Data wydania:

2000, nr 3,4

Typ zasobu:

artykuł

Opis:

Original extraction techniques of microwave small-signal model and technological parameters for SOI MOSFETs are presented. The characterization method combines careful design of probing and calibration structures, rigorous in situ calibration and a powerful direct extraction method. The proposed characterization procedure is directly based on the physical meaning of each small-signal model element. Knowing the qualitative small-signal behavior of each model parameter versus bias conditions, the high frequency equivalent circuit can be simplified for extraction purposes. Biasing MOSFETs under depletion, strong inversion and saturation conditions, certain technological parameters and microwave small-signal elements can be extracted directly from the measured S-parameters. These new extraction techniques allow us to understand deeply the behavior of the sub-quarter micron SOI MOSFETs in microwave domain and to control their fabrication process.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:1642 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2000.3-4.27

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SOI MOSFET microwave devices microelectronics

Object collections:

Last modified:

25 lut 2026

In our library since:

22 maj 2014

Number of object content hits:

549

All available object's versions:

https://ribes-54.man.poznan.pl/publication/1844

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Edition name Date
Goffioul, Michël; Vanhoenacker, Danielle; Raskin, Jean-Pierre, Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4 25 lut 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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