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Title: Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1

Creator:

Buiu, Octavian ; Hall, Stephen ; Ashburn, Peter ; Groot de, Kees

Date:

2004, nr 1

Resource Type:

artykuł

Description:

There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBT's in silicon-on-insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBT's with SOI-CMOS.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:509

DOI:

10.26636/jtit.2004.1.232

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

HBT SOI vertical MOSFET

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Mar 10, 2010

Number of object content hits:

355

All available object's versions:

https://ribes-54.man.poznan.pl/publication/569

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Edition name Date
Hall, Stephen; Buiu, Octavian; Ashburn, Peter; Groot de, Kees, Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1 Feb 25, 2026

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