Tytuł:

Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1

Autor:

Buiu, Octavian ; Hall, Stephen ; Ashburn, Peter ; Groot de, Kees

Temat i słowa kluczowe:

HBT ; SOI ; vertical MOSFET

Opis:

There is a well recognised need to introduce new materials and device architectures to Si technology to achieve the objectives set by the international roadmap. This paper summarises our work in two areas: vertical MOSFETs, which can allow increased current drive per unit area of Si chip and SiGe HBT's in silicon-on-insulator technology, which bring together and promise to extend the very high frequency performance of SiGe HBT's with SOI-CMOS.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Data wydania:

2004, nr 1

Typ zasobu:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2004.1.232

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności