Title:

Critical modeling issues of SiGe semiconductor devices, Journal of Telecommunications and Information Technology, 2004, nr 1

Creator:

Selberherr, Siegfried ; Palankovski, Vassil

Subject and Keywords:

mobility ; modeling ; bandgap ; S-parameters ; small-signal simulation ; SiGe HBT ; numerical simulation

Description:

We present the state-of-the-art in simulation of silicon-germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown on Si. We use a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe heterojunction bipolar transistors (HBTs) by means of small-signal AC-analysis. Results from two-dimensional hydrodynamic simulations ofSiGe HBTs are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2004, nr 1

Resource Type:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2004.1.233

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności