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Title: CVD growth of high speed SiGe HBTs using SiH4, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Autor:

Landgren, Gunnar ; Radamson, Henry H. ; Grahn, Jan

Data wydania:

2000, nr 3,4

Typ zasobu:

artykuł

Opis:

C have been investigated. The results showed that the growth rate of SiGe layers has a strong effect on the evolution of defect density in the structure. Furthermore, B-doped SiGe layers have a higher thermal stability compared to undoped layers. The analysis of the collector profiles showed a higher incorporation of P in silane-based epitaxy compared to As. Meanwhile, the growth of As- or P-doped layers on the patterned substrates suffered from a high loading effect demanding an accurate calibration.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:1638 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2000.3-4.32

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

HBT SiGe epitaxy silane

Object collections:

Last modified:

Feb 25, 2026

In our library since:

May 20, 2014

Number of object content hits:

173

All available object's versions:

https://ribes-54.man.poznan.pl/publication/1838

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Edition name Date
Radamson, Henry H.; Grahn, Jan; Landgren, Gunnar, CVD growth of high speed SiGe HBTs using SiH4, Journal of Telecommunications and Information Technology, 2000, nr 3,4 Feb 25, 2026

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