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Title: Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base, Journal of Telecommunications and Information Technology, 2007, nr 3

Autor:

Jakubowski, Andrzej ; Łukasiak, Lidia ; Zaręba, Agnieszka

Data wydania:

2007, nr 3

Typ zasobu:

artykuł

Opis:

A model of the position of the edge of emitter-base junction in the base and collector current pre-exponential ideality factor in HBT transistor with a SiGe base is presented. The model is valid for transistors with nonuniform profiles of doping and Ge content. The importance of taking into account the dependence of the effective density of states in SiGe on local Ge content and that of electron diffusion coefficient in SiGe on drift field for modeling accuracy is studied.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:293

DOI:

10.26636/jtit.2007.3.836

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SiGe base width modulation heterojunction bipolar transistor

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 28, 2010

Number of object content hits:

333

All available object's versions:

https://ribes-54.man.poznan.pl/publication/336

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Edition name Date
Zaręba, Agnieszka; Łukasiak, Lidia; Jakubowski, Andrzej, Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base, Journal of Telecommunications and Information Technology, 2007, nr 3 Jul 24, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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