Instytut Łączności – Państwowy Instytut Badawczy contains 2 275 digital objects
Object
Title: Electron mobility and drain current in strained-Si MOSFET, Journal of Telecommunications and Information Technology, 2007, nr 3
Description:
Publisher:
Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
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Resource Identifier:
DOI:
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eISSN:
Source:
Journal of Telecommunications and Information Technology
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Rights Management:
Biblioteka Naukowa Instytutu Łączności
Object collections:
- Digital Library
- Digital Library > Institute's Publications
- Digital Library > Institute's Publications > Current Publications > Journal of Telecommunications and Information Technology (JTIT)
Last modified:
Jul 24, 2024
In our library since:
Jan 28, 2010
Number of object content hits:
844
All available object's versions:
https://ribes-54.man.poznan.pl/publication/335
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