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Title: The influence of yield model parameters on the probability of defect occurrence, Journal of Telecommunications and Information Technology, 2007, nr 3

Autor:

Pleskacz, Witold A. ; Rakowski, Michał

Data wydania:

2007, nr 3

Typ zasobu:

artykuł

Opis:

This paper describes the analysis of the influence of yield loss model parameters on the calculation of the probability of arising shorts between conducting paths in IC’s. The characterization of the standard cell in AMS 0.8 μm CMOS technology is presented as well as obtained probability results and estimations of yield loss by changing values of model parameters.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:296

DOI:

10.26636/jtit.2007.3.840

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

probability of defect occurrence spot defect critical area yield model parameters

Object collections:

Last modified:

24 lip 2024

In our library since:

28 sty 2010

Number of object content hits:

236

All available object's versions:

https://ribes-54.man.poznan.pl/publication/339

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Edition name Date
Rakowski, Michał; Pleskacz, Witold A., The influence of yield model parameters on the probability of defect occurrence, Journal of Telecommunications and Information Technology, 2007, nr 3 24 lip 2024
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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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