Title:

Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Raskin, Jean-Pierre ; Głuszko, Grzegorz ; Łukasiak, Lidia ; Olbrechts, Benoit ; Kilchytska, Valeriya ; Flandre, Denis ; Chung, Tsung Ming

Subject and Keywords:

SOI ; Si layer transfer ; wafer bonding ; interface traps ; electrical characterization ; charge-pumping

Description:

The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Date:

2007, nr 3

Resource Type:

artykuł

Format:

application/pdf

DOI:

10.26636/jtit.2007.3.831

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności