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Title: The 100 W class A power amplifier for L-band T/R module, Journal of Telecommunications and Information Technology, 2002, nr 1

Creator:

Gryglewski, Daniel ; Wojtasiak, Wojciech ; Sędek, Edward

Date:

2002, nr 1

Resource Type:

artykuł

Description:

In the paper a balanced high power amplifier with class A silicon bipolar transistors for L-band T/R module is described. The amplifier was designed for maximum power and minimum transmitance distortions. The obtained parameters of the amplifier are as follow: output power at 1 dB compression P1 dB > 49 dBm, linear gain jS21j > 10 dB, and transmitance deviations during the RF pulse: phase Darg(S21) < 0:9Æ and DPout < 0:2 dB.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:633 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2002.1.102

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

modeling finite difference time domain method microwave transistors power transistors MESFETs

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Mar 24, 2010

Number of object content hits:

317

All available object's versions:

https://ribes-54.man.poznan.pl/publication/704

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Edition name Date
Wojtasiak, Wojciech; Gryglewski; Daniel; Sędek, Edward, The 100 W class A power amplifier for L-band T/R module, Journal of Telecommunications and Information Technology, 2002, nr 1 Feb 25, 2026

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