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Title: Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator, Journal of Telecommunications and Information Technology, 2009, nr 4

Autor:

Szmidt, Jan ; Firek, Piotr

Data wydania:

2009, nr 4

Typ zasobu:

artykuł

Opis:

The properties of barium titanate (BaTiO3, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO3 thin films (containing La2O3 admixture) acting as gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2% wt.) target. In the paper transfer and output I−V, transconductance and output conductance characteristics of the obtained transistors are presented and discussed. Basic parameters of these devices, such as threshold voltage (VTH) are determined and discussed.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:474 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2009.4.972

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

radio frequency plasma sputtering MISFET structures I–V characteristics barium titanate

Object collections:

Last modified:

27 sie 2024

In our library since:

8 mar 2010

Number of object content hits:

271

All available object's versions:

https://ribes-54.man.poznan.pl/publication/532

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Edition name Date
Firek, Piotr; Szmidt, Jan, echnology of MISFET with SiO2/BaTiO3 System as a Gate Insulator, Journal of Telecommunications and Information Technology, 2009, nr 4 27 sie 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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