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Title: Large-Signal RF Modeling with the EKV3 MOSFET Model, Journal of Telecommunications and Information Technology, 2010, nr 1

Creator:

Chalkiadaki, Maria-Anna ; Bucher, Matthias

Date:

2010, nr 1

Resource Type:

artykuł

Description:

This paper presents a validation of the EKV3 MOSFET model under load-pull conditions with high input power at 5.8 GHz, as well as S-parameter measurements with low input power up to 20 GHz. The EKV3 model is able to represent coherently the large- and small-signal RF characteristics in advanced 90 nm CMOS technology. Multifinger devices with nominal drawn gate length of 70 nm are used.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:767 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2010.1.1060

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

compact model radio frequency large-signal MOSFET model load-pull EKV3 model

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Oct 5, 2010

Number of object content hits:

291

All available object's versions:

https://ribes-54.man.poznan.pl/publication/851

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Edition name Date
Chalkiadaki, Maria-Anna; Bucher, Matthias, Large-Signal RF Modeling with the EKV3 MOSFET Model, Journal of Telecommunications and Information Technology, 2010, nr 1 Feb 25, 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

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