Advanced search ?

Object

Download

Title: Modeling of negative bias temperature instability, Journal of Telecommunications and Information Technology, 2007, nr 2

Creator:

Selberherr, Siegfried ; Grasser, Tibor

Date:

2007, nr 2

Resource Type:

artykuł

Description:

Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important over the last couple of years due to the high electric fields in the oxide and the routine incorporation of nitrogen. During negative bias temperature stress a shift in important parameters of PMOS transistors, such as the threshold voltage, subthreshold slope, and mobility is observed. Modeling efforts date back to the reaction-diffusion model proposed by Jeppson and Svensson thirty years ago which has been continuously refined since then. Although the reaction-diffusion model is able to explain many experimentally observed characteristics, some microscopic details are still not well understood. Recently, various alternative explanations have been put forward, some of them extending, some of them contradicting the standard reaction-diffusion model. We review these explanations with a special focus on modeling issues.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:272

DOI:

10.26636/jtit.2007.2.814

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

simulation interface states negative bias temperature instability defects semiconductor device equations reliability, negative bias temperature instability, modeling, simulation, hydrogen, silicon dioxide, defects, interface states, semiconductor device equations modeling hydrogen silicon dioxide

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 22, 2010

Number of object content hits:

164

All available object's versions:

https://ribes-54.man.poznan.pl/publication/314

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Grasser, Tibor; Selberherr, Siegfried, Modeling of negative bias temperature instability, Journal of Telecommunications and Information Technology, 2007, nr 2 Jul 24, 2024

Objects Similar
Critical modeling issues of SiGe semiconductor devices, Journal of Telecommunications and Information Technology, 2004, nr 1

Selberherr, Siegfried Palankovski, Vassil

2004, nr 1
artykuł
UML Simulation of a TopologyConfiguration Model, Journal of Telecommunications and Information Technology, 2012, nr 4

Zieliński, Zbigniew Stasiak, Andrzej Dąbrowski, Włodzimierz

2012, nr 4
artykuł
New approach to power semiconductor devices modeling, Journal of Telecommunications and Information Technology, 2004, nr 1

Napieralska, Małgorzata Napieralski, Andrzej

2004, nr 1
artykuł
Multi-Domain Modeling and Simulations of the Heterogeneous Systems, Journal of Telecommunications and Information Technology, 2010, nr 1

Bieniek, Tomasz Tomaszewski, Daniel Grabiec, Piotr Janus, Paweł Kociubiński, Andrzej Malinowski, Arkadiusz Ekwińska, Magdalena Janczyk, Grzegorz Szynka, Jerzy

2010, nr 1
artykuł
Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers, Journal of Telecommunications and Information Technology, 2010, nr 1

Mitrovic, Ivona Z. Hall, Stephen Engström, Olof Schmidt, Mathias Piscator, Johan Raeissi, Bahman Gottlob, Heinrich D. B. Hurley, Paul K. Cherkaoui, Karim

2010, nr 1
artykuł
Energy concepts involved in MOS characterization, Journal of Telecommunications and Information Technology, 2007, nr 2

Engström, Olof Gutt, Tomasz Przewłocki, Henryk M.

2007, nr 2
artykuł
Properties and benefits of fluorine in silicon and silicon-germanium devices, Journal of Telecommunications and Information Technology, 2007, nr 2

Ashburn, Peter Mubarek El, Huda A. W.

2007, nr 2
artykuł
How to Model an Engaging Online Quiz? The Emotion Modeling Approach, Journal of Telecommunications and Information Technology, 2022, nr 1

Zulkifli, Syazwanie Filzah binti Khairuddin, Muhammad Asyraf bin Waishiang, Cheah Jali, Nurfauza binti Bujang, Yanti Rosmunie binti

2022, nr 1
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information