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Title: Modeling of negative bias temperature instability, Journal of Telecommunications and Information Technology, 2007, nr 2

Autor:

Selberherr, Siegfried ; Grasser, Tibor

Data wydania:

2007, nr 2

Typ zasobu:

artykuł

Opis:

Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important over the last couple of years due to the high electric fields in the oxide and the routine incorporation of nitrogen. During negative bias temperature stress a shift in important parameters of PMOS transistors, such as the threshold voltage, subthreshold slope, and mobility is observed. Modeling efforts date back to the reaction-diffusion model proposed by Jeppson and Svensson thirty years ago which has been continuously refined since then. Although the reaction-diffusion model is able to explain many experimentally observed characteristics, some microscopic details are still not well understood. Recently, various alternative explanations have been put forward, some of them extending, some of them contradicting the standard reaction-diffusion model. We review these explanations with a special focus on modeling issues.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:272

DOI:

10.26636/jtit.2007.2.814

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

simulation interface states negative bias temperature instability defects semiconductor device equations reliability, negative bias temperature instability, modeling, simulation, hydrogen, silicon dioxide, defects, interface states, semiconductor device equations modeling hydrogen silicon dioxide

Object collections:

Last modified:

24 lip 2024

In our library since:

22 sty 2010

Number of object content hits:

174

All available object's versions:

https://ribes-54.man.poznan.pl/publication/314

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Edition name Date
Grasser, Tibor; Selberherr, Siegfried, Modeling of negative bias temperature instability, Journal of Telecommunications and Information Technology, 2007, nr 2 24 lip 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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