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Title: Gate dielectrics: process integration issues and electrical properties, Journal of Telecommunications and Information Technology, 2005, nr 1

Creator:

Schwalke, Udo

Date:

2005, nr 1

Resource Type:

artykuł

Description:

In this work we report on the process integration of crystalline praseodymium oxide (Pr2O3) high-k gate dielectric. Key process steps that are compatible with the high-k material have been developed and were applied for realisation of MOS structures. For the first time Pr2O3 has been integrated successfully in a conventional MOS process with n+ poly-silicon gate electrode. The electrical properties of Pr2O3 MOS capacitors are presented and discussed.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:358

DOI:

10.26636/jtit.2005.1.298

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

high-k dielectrics CMOS Pr2O3 wet chemical cleaning RIE process integration wet chemical etching resist removal

Object collections:

Last modified:

Jun 11, 2024

In our library since:

Feb 26, 2010

Number of object content hits:

337

All available object's versions:

https://ribes-54.man.poznan.pl/publication/408

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Edition name Date
Schwalke, Udo, Gate dielectrics: process integration issues and electrical properties, Journal of Telecommunications and Information Technology, 2005, nr 1 Jun 11, 2024

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