Instytut Łączności – Państwowy Instytut Badawczy contains 2 325 digital objects
Object
Title: Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime, Journal of Telecommunications and Information Technology, 2004, nr 1
Description:
Publisher:
Instytut Łączności - Państwowy Instytut Badawczy, Warszawa
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DOI:
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eISSN:
Source:
Journal of Telecommunications and Information Technology
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Rights Management:
Biblioteka Naukowa Instytutu Łączności
Object collections:
- Digital Library
- Digital Library > Institute's Publications
- Digital Library > Institute's Publications > Current Publications > Journal of Telecommunications and Information Technology (JTIT)
- Digital Library > Institute's Publications > Archives > Przegląd Prac Instytutu Łączności
Last modified:
Feb 25, 2026
In our library since:
Mar 10, 2010
Number of object content hits:
228
All available object's versions:
https://ribes-54.man.poznan.pl/publication/574
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