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Title: High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection, Journal of Telecommunications and Information Technology, 2004, nr 1

Creator:

Kilchytska, Valeriya ; Houk, Yuri ; Nazarov, Alexei N.

Date:

2004, nr 1

Resource Type:

artykuł

Description:

Mechanisms of the charge transfer, the charge trapping, and the generation of positive charge during the high-field electron injection into buried oxide of silicon-on-insulator structures fabricated by different technologies are analyzed based on the data obtained from current-voltage, injection current-time, and capacitance-voltage characteristics together with SIMS data. Electron injection both from the Si film and the Si substrate is considered. The possibility of using the trap-assisted electron tunneling mechanisms to explain the high-field charge transfer through the buried oxides of UNIBOND and SIMOX SOI materials is considered. It is shown that considerable positive charge is accumulated near the buried oxide/substrate interface independently from the direction of the injection (from the lm or from the silicon substrate) for UNIBOND and SIMOX SOI structures. Thermal stability of the charge trapped in the buried oxides is studied at temperatures ranging from 20 to 400C. The theory is compared with the experimental data to find out the mechanisms of the generation of positive charge in UNIBOND and SIMOX buried oxides.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:512

DOI:

10.26636/jtit.2004.1.229

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

silicon-on-insulator trap-assisted tunneling anodehole injection buried oxide Fowler-Nordheim current SIMOX band-to-band impact ionization UNIBOND

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Mar 10, 2010

Number of object content hits:

342

All available object's versions:

https://ribes-54.man.poznan.pl/publication/572

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Edition name Date
Nazarov, Alexei N.; Houk, Yuri; Kilchytska, Valeriya, High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection, Journal of Telecommunications and Information Technology, 2004, nr 1 Feb 25, 2026

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