Advanced search ?

Object

Download

Title: Challenges in ultrathin oxide layers formation, Journal of Telecommunications and Information Technology, 2001, nr 1

Autor:

Jakubowski, Andrzej ; Beck, Romuald B. ; Łukasiak, Lidia ; Korwin-Pawłowski, Michał

Data wydania:

2001, nr 1

Typ zasobu:

artykuł

Opis:

In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the „Roadmap’2000”. Formation, however, of such layers creates a lot of technical and technological problems. The aim of this paper is to present the technological methods that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:683 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.46

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

PECVD oxidation silicon technology ultrathin layers gateoxide RTO

Object collections:

Last modified:

20 maj 2024

In our library since:

26 kwi 2010

Number of object content hits:

355

All available object's versions:

https://ribes-54.man.poznan.pl/publication/759

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Beck, Romuald B.; Jakubowski, Andrzej; Łukasiak, Lidia; Korwin-Pawłowski, Michał, Challenges in ultrathin oxide layers formation, Journal of Telecommunications and Information Technology, 2001, nr 1 20 maj 2024

Objects Similar
The influence of annealing (900◦C) of ultra-thin PECVD silicon oxynitride layers, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Głuszko, Grzegorz Konarski, Piotr Schmeißer, Dieter Hoffmann, Patrick Mroczyński, Robert

2007, nr 3
artykuł
Oxidation kinetic sof silicon strained by silicon germanium, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Grabowski, Jarosław

2007, nr 3
artykuł
Comparison of composition of ultra-thin silicon oxynitride layers’ fabricated by PECVD and ultrashallow rf plasma ion implantation, Journal of Telecommunications and Information Technology, 2007, nr 3

Beck, Romuald B. Ćwil, Michał Konarski, Piotr Bieniek, Tomasz Schmeißer, Dieter Hoffmann, Patrick Mroczyński, Robert

2007, nr 3
artykuł
Ultrathin oxynitride films for CMOS technology, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Beck, Romuald B.

2004, nr 1
artykuł
Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectrics, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Majkusiak, Bogdan Korwin-Pawłowski, Michał Janik, Tomasz

2001, nr 1
artykuł
Ultra-shallow nitrogen plasma implantation for ultra-thin silicon oxynitride (SiOxNy) layer formation, Journal of Telecommunications and Information Technology, 2005, nr 1

Jakubowski, Andrzej Beck, Romuald B. Bieniek, Tomasz Kudła, Andrzej

2005, nr 1
artykuł
History of Semiconductors, Journal of Telecommunications and Information Technology, 2010, nr 1

Jakubowski, Andrzej Łukasiak, Lidia

2010, nr 1
artykuł
Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Beck, Romuald B. Ćwil, Michał Głuszko, Grzegorz Konarski, Piotr Bieniek, Tomasz

2007, nr 3
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information