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Title: Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film, Journal of Telecommunications and Information Technology, 2001, nr 1

Creator:

Szmidt, Jan ; Werbowy, Aleksander ; Dusiński, Emil ; Zdunek, Krzysztof

Date:

2001, nr 1

Resource Type:

artykuł

Description:

The paper presents the parameters of MIS transistors with plasma deposited thin film aluminum oxide gate insulator. Al2O3 films were synthesized by means of the lowenergy, low-temperature reactive pulse plasma (RPP) method. Investigated transistors, with channel width to length (W/L) ratios of 200/10 [mm/mm] and 200/20 [mm/mm] were manufactured in a standard microelectronic technological laboratory. In order to determine the most important parameters of produced devices there were measured their electrical characteristics. The distribution of the threshold voltage values was studied on a representative set of over two hundred structures.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:692 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.37

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

reliability MIS transistor Al2O3 films RPP method

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Apr 27, 2010

Number of object content hits:

329

All available object's versions:

https://ribes-54.man.poznan.pl/publication/768

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Edition name Date
Szmidt, Jan; Werbowy, Aleksander; Dusiński, Emil; Zdunek, Krzysztof, Reliability of MIS transistors with plasma deposited Al2O3 gate dielectric film, Journal of Telecommunications and Information Technology, 2001, nr 1 Feb 25, 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

E-Mail

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