Advanced search ?

Object

Download

Title: On-wafer wideband characterization: a powerful tool for improving the IC technologies, Journal of Telecommunications and Information Technology, 2007, nr 2

Creator:

Raskin, Jean-Pierre ; Lederer, Dimitri

Date:

2007, nr 2

Resource Type:

artykuł

Description:

In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:269

DOI:

10.26636/jtit.2007.2.811

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

MOSFET small-signal equivalent circuit extraction techniques wideband characterization silicon-on-insulator microwave frequency

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 22, 2010

Number of object content hits:

332

All available object's versions:

https://ribes-54.man.poznan.pl/publication/311

Show description in RDF format:

RDF

Show description in OAI-PMH format:

OAI-PMH

Edition name Date
Lederer, Dimitri; Raskin, Jean-Pierre, On-wafer wideband characterization: a powerful tool for improving the IC technologies, Journal of Telecommunications and Information Technology, 2007, nr 2 Jul 24, 2024

Objects Similar
SOI Technology: An Opportunity for RF Designers?, Journal of Telecommunications and Information Technology, 2009, nr 4

Raskin, Jean-Pierre

2009, nr 4
artykuł
Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle

2000, nr 3,4
artykuł
Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle Dambrine, Gilles

2000, nr 3,4
artykuł
The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs, Journal of Telecommunications and Information Technology, 2009, nr 4

Raskin, Jean-Pierre Vanhoenacker-Janvier, Danielle Emam, Mostafa Houri, Samer

2009, nr 4
artykuł
High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection, Journal of Telecommunications and Information Technology, 2004, nr 1

Kilchytska, Valeriya Houk, Yuri Nazarov, Alexei N.

2004, nr 1
artykuł
Challenges for 10 nm MOSFET process integration, Journal of Telecommunications and Information Technology, 2007, nr 2

Hellström, Per-Erik Haartman von, Martin Östling, Mikael Zhang, Zhen Hallstedt, Julius Zhang, Shili Malm, Bengt Gunnar

2007, nr 2
artykuł
Impact of Crosstalk into High Resistivity Silicon Substrate on the RF Performance of SOI MOSFET, Journal of Telecommunications and Information Technology, 2010, nr 4

Raskin, Jean-Pierre Neve, César Roda Gharsallah, Ali Ali, Khaled Ben

2010, nr 4
artykuł
Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities, Journal of Telecommunications and Information Technology, 2007, nr 3

Raskin, Jean-Pierre Głuszko, Grzegorz Łukasiak, Lidia Olbrechts, Benoit Kilchytska, Valeriya Flandre, Denis Chung, Tsung Ming

2007, nr 3
artykuł
More
×

Citation

Citation style:

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information