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Title: Reliability of deep submicron MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Creator:

Balestra, Francis

Date:

2001, nr 1

Resource Type:

artykuł

Description:

In this work, a review of the reliability of n- and p-channel Si and SOI MOSFETs as a function of gate length and temperature is given. The main hot carrier effects and degradations are compared for bulk and SOI devices in a wide range of gate length, down to deep submicron. The worst case aging, device lifetime and maximum drain bias that can be applied are addressed. The physical mechanisms and the emergence of new phenomena at the origin of the degradation are studied for advanced MOS transistors. The impact of the substrate bias is also outlined.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:681 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.48

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

reliability bulk MOSFETs deep submicrontransistors SOI devices

Object collections:

Last modified:

May 20, 2024

In our library since:

Apr 26, 2010

Number of object content hits:

243

All available object's versions:

https://ribes-54.man.poznan.pl/publication/757

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Edition name Date
Balestra, Francis, Reliability of deep submicron MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1 May 20, 2024

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