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Title: Properties and benefits of fluorine in silicon and silicon-germanium devices, Journal of Telecommunications and Information Technology, 2007, nr 2

Creator:

Ashburn, Peter ; Mubarek El, Huda A. W.

Date:

2007, nr 2

Resource Type:

artykuł

Description:

This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is shown to have many beneficial effects in polysilicon emitter bipolar transistors, including higher values of gain, lower emitter resistance, lower 1/f noise and more ideal base characteristics. These results are explained by passivation of trapping states at the polysilicon/silicon interface and accelerated break-up of the interfacial oxide layer. Fluorine is also shown to be extremely effective at suppressing the diffusion of boron, completely suppressing boron transient enhanced diffusion and significantly reducing boron thermal diffusion. The boron thermal diffusion suppression correlates with the appearance of a fluorine peak on the SIMS profile at approximately half the projected range of the fluorine implant, which is attributed to vacancy- fluorine clusters. When applied to bipolar technology, fluorine implantation leads to a record fT of 110 GHz in a silicon bipolar transistor.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:267

DOI:

10.26636/jtit.2007.2.809

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

passivation of interface states boron diffusion bipolar transistor fluorine polysilicon emitter

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 8, 2010

Number of object content hits:

699

All available object's versions:

https://ribes-54.man.poznan.pl/publication/305

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Edition name Date
Ashburn, Peter; Mubarek El, Huda A. W., Properties and benefits of fluorine in silicon and silicon-germanium devices, Journal of Telecommunications and Information Technology, 2007, nr 2 Jul 24, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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