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Title: High-temperature instability processes in SOI structures and MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Creator:

Nazarov, Alexei N. ; Kilchytska, V. I. ; Colinge, J. P. ; Vovk, Ja. N.

Date:

2001, nr 1

Resource Type:

artykuł

Description:

The paper reviews the problems related to BOX high-temperature instability in SOI structures and MOSFETs. The methods of bias-temperature research applied to SOI structures and SOI MOSFETs are analysed and the results of combined electrical studies of ZMR, and SIMOX SOI structures are presented. The studies are focused mainly on electrical discharging processes in the BOX at high temperature and its link with new instability phenomena such as high-temperature kink effects in SOI MOSFETs.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:682 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.47

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SOI MOSFET SIMOX ZMR high-temperature instability

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Apr 26, 2010

Number of object content hits:

197

All available object's versions:

https://ribes-54.man.poznan.pl/publication/758

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Edition name Date
Nazarov, Alexei N.; Kilchytska, V. I.; Vovk, Ja. N.; Colinge, J. P., High-temperature instability processes in SOI structures and MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1 Feb 25, 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

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