Filters
  • Collections
  • Group objects
  • File type
  • Creator
  • Subject and Keywords
  • Date
  • Resource Type
  • Language
Advanced search ?

Search for: [Subject and Keywords = SOI MOSFET] OR [Subject and Keywords = compact model coding] OR [Subject and Keywords = Verilog\-AMS] OR [Title = Standardization of the compact model coding\: non\-fully depleted SOI MOSFET example, Journal of Telecommunications and Information Technology, 2005, nr 1] OR [Creator = Jakubowski, Andrzej] OR [Creator = Tomaszewski, Daniel] OR [Creator = Grabiński, Władysław] OR [Creator = Lemaitre, Laurent]

Number of results: 35

Items per page:
add all to bibliography
A model of partially-depleted SOI MOSFETs in the subthreshold range, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Domański, Krzysztof

2001, nr 1
artykuł
An impact of frequency on capacitances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Zaręba, Agnieszka

2000, nr 3,4
artykuł
An impact of physical phenomena on admittances of partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Gibki, Jan

2001, nr 1
artykuł
Silicon microelectronics: where we have come from and where we are heading, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Łukasiak, Lidia Pióro, Zbigniew

2004, nr 1
artykuł
Recent developments in vertical MOSFETs and SiGe HBTs, Journal of Telecommunications and Information Technology, 2004, nr 1

Buiu, Octavian Hall, Stephen Ashburn, Peter Groot de, Kees

2004, nr 1
artykuł
Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle

2000, nr 3,4
artykuł
Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Raskin, Jean-Pierre Goffioul, Michël Vanhoenacker, Danielle Dambrine, Gilles

2000, nr 3,4
artykuł
High-temperature instability processes in SOI structures and MOSFETs, Journal of Telecommunications and Information Technology, 2001, nr 1

Nazarov, Alexei N. Kilchytska, V. I. Colinge, J. P. Vovk, Ja. N.

2001, nr 1
artykuł
Characterization of SOI MOSFETs by means of charge-pumping, Journal of Telecommunications and Information Technology, 2007, nr 3

Głuszko, Grzegorz Łukasiak, Lidia Gottlob, Heinrich Lemme, Max Szostak, Sławomir

2007, nr 3
artykuł
Characterization of SOI fabrication process using gated-diode measurements and TEM studies, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Gibki, Jan Ratajczak, Jacek Kątcki, Jerzy

2000, nr 3,4
artykuł
Piezoresistive sensors for atomic force microscopy – numerical simulations by means of virtual wafer fab, Journal of Telecommunications and Information Technology, 2001, nr 1

Jakubowski, Andrzej Tomaszewski, Daniel Grabiec, Piotr Rangelow, Ivo W. Domański, Krzysztof Barth, Wolfgang Dębski, Tomasz

2001, nr 1
artykuł
Analysis of the Dispersion of Electrical Parameters and Characteristics of FinFET Devices, Journal of Telecommunications and Information Technology, 2009, nr 4

Jakubowski, Andrzej Tomaszewski, Daniel Łukasiak, Lidia Korwin-Pawlowski, Michael L. Malinowski, Arkadiusz Sekine, Makoto Hori, Masaru

2009, nr 4
artykuł
The Impact of Externally Applied Mechanical Stress on Analog and RF Performances of SOI MOSFETs, Journal of Telecommunications and Information Technology, 2009, nr 4

Raskin, Jean-Pierre Vanhoenacker-Janvier, Danielle Emam, Mostafa Houri, Samer

2009, nr 4
artykuł
Advanced compact modeling of the deep submicron technologies, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Grabiński, Władysław Bucher, Matthias Sallese, Jean-Michel Krummenacher, Francçis

2000, nr 3,4
artykuł
Special size effects in advanced single-gate and multiple-gate SOI transistors, Journal of Telecommunications and Information Technology, 2007, nr 2

Faynot, Olivier Ohata, Akiko Ritzenthaler, Romain Cristoloveanu, Sorin

2007, nr 2
artykuł
Optimization of selectedp arameters of SiGe HBT transistors, Journal of Telecommunications and Information Technology, 2000, nr 3,4

Jakubowski, Andrzej Zaręba, Agnieszka

2000, nr 3,4
artykuł
History of Semiconductors, Journal of Telecommunications and Information Technology, 2010, nr 1

Jakubowski, Andrzej Łukasiak, Lidia

2010, nr 1
artykuł
Semi-automatic test system for characterization of ASIC/MPWS, Journal of Telecommunications and Information Technology, 2005, nr 1

Tomaszewski, Daniel Kociubiński, Andrzej Zając, Jerzy Wójcik, Janusz

2005, nr 1
artykuł
Si-Based Electrodes for Potentiometric Measurements of Aqueous Solutions, Journal of Telecommunications and Information Technology, 2009, nr 4

Tomaszewski, Daniel Jaroszewicz, Bohdan Grabiec, Piotr Zaborowski, Michał

2009, nr 4
artykuł
Ultrathin oxynitride films for CMOS technology, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Beck, Romuald B.

2004, nr 1
artykuł
A versatile tool for extraction of MOSFETs parameters, Journal of Telecommunications and Information Technology, 2005, nr 1

Tomaszewski, Daniel Grabiec, Piotr Marczewski, Jacek Domański, Krzysztof Kucharski, Krzysztof Kociubiński, Andrzej

2005, nr 1
artykuł
Electrical characterization of ISFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Tomaszewski, Daniel Jaroszewicz, Bohdan Pijanowska, Dorota G. Grabiec, Piotr Zaborowski, Michał Yang, Chia-Ming

2007, nr 3
artykuł
Modeling SiGe-base HBT using APSYS 2000 - a 2D simulator, Journal of Telecommunications and Information Technology, 2004, nr 1

Jakubowski, Andrzej Łukasiak, Lidia Linkowski, Adam

2004, nr 1
artykuł
Modeling of the inverse base width modulation effect in HBT transistor with graded SiGe base, Journal of Telecommunications and Information Technology, 2007, nr 3

Jakubowski, Andrzej Łukasiak, Lidia Zaręba, Agnieszka

2007, nr 3
artykuł

Contact details

Address

Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

Visit us!

This page uses 'cookies'. More information