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Title: DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content, Journal of Telecommunications and Information Technology, 2005, nr 1

Creator:

Parker, Evan H. C. ; Whall, Terence E. ; König, Ulf ; Känel, von Hans ; Hoeck, Georg ; Herzog, Hans-Joest ; Myronov, Maksym ; Durov, Sergiy ; Hackbarth, Thomas ; Mironov, Oleg A.

Date:

2005, nr 1

Resource Type:

artykuł

Description:

Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 um. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:372

DOI:

10.26636/jtit.2005.1.284

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SiGe effective hole mobility C-V metamorphic MOSFET LF-noise I-V

Object collections:

Last modified:

Jun 12, 2024

In our library since:

Mar 1, 2010

Number of object content hits:

375

All available object's versions:

https://ribes-54.man.poznan.pl/publication/422

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Edition name Date
Durov, Sergiy, DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content, Journal of Telecommunications and Information Technology, 2005, nr 1 Jun 12, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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(+48) 5128 696

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