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Title: Electrical characterization of ISFETs, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Tomaszewski, Daniel ; Jaroszewicz, Bohdan ; Pijanowska, Dorota G. ; Grabiec, Piotr ; Zaborowski, Michał ; Yang, Chia-Ming

Date:

2007, nr 3

Resource Type:

artykuł

Description:

Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:287

DOI:

10.26636/jtit.2007.3.830

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

characterization CMOS I-V characteristics ISFET electrical measurements parameters extraction

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 27, 2010

Number of object content hits:

2 336

All available object's versions:

https://ribes-54.man.poznan.pl/publication/330

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Edition name Date
Tomaszewski, Daniel; Yang, Chia-Ming; Jaroszewicz, Bohdan; Zaborowski, Michał; Grabiec, Piotr; Pijanowska, Dorota G., Electrical characterization of ISFETs, Journal of Telecommunications and Information Technology, 2007, nr 3 Jul 24, 2024

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