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Title: Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures, Journal of Telecommunications and Information Technology, 2001, nr 1

Creator:

Druzhinin, Anatoly ; Pankov, Yury

Date:

2001, nr 1

Resource Type:

artykuł

Description:

A physical model of grain boundary influence on the piezoresistive effect of p-type conductivity of polysilicon layers in SOI-structures is developed. Software calculating piezoresistive properties of boron-doped p-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine-grained non-recrystallized SOI-structures doped with boron up to 3∙10^19cm^-3 only.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:686 ; ISSN 1509-4553, on-line: ISSN 1899-8852

DOI:

10.26636/jtit.2001.1.43

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

SOI MLR polysilicon layers

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Apr 26, 2010

Number of object content hits:

273

All available object's versions:

https://ribes-54.man.poznan.pl/publication/762

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Edition name Date
Pankov, Yury; Druzhinin, Anatoly, Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures, Journal of Telecommunications and Information Technology, 2001, nr 1 Feb 25, 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

Phone

(+48) 5128 696

E-Mail

biblioteka@il-pib.pl

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