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Title: Low frequency noise in Si and Si/SiGe/Si PMOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2

Autor:

Grasby, Tim J. ; Bacon, Adam R. ; Parker, Evan H. C. ; Fulgoni, Dominic J. F. ; Leadley, David R. ; Thomas, Stephen M. ; Whall, Terence E. ; Prest, Martin J.

Data wydania:

2007, nr 2

Typ zasobu:

artykuł

Opis:

Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.

Wydawca:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Identyfikator zasobu:

oai:bc.itl.waw.pl:268

DOI:

10.26636/jtit.2007.2.810

ISSN:

1509-4553

eISSN:

1899-8852

Źródło:

Journal of Telecommunications and Information Technology

Język:

ang

Prawa:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

MOSFET dynamic threshold mode silicon germanium heterostructures electronic noise

Object collections:

Last modified:

Jul 24, 2024

In our library since:

Jan 8, 2010

Number of object content hits:

185

All available object's versions:

https://ribes-54.man.poznan.pl/publication/306

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Edition name Date
Thomas, Stephen M.; Prest, Martin J.; Fulgoni, Dominic J. F.; Bacon, Adam R.; Grasby, Tim J. ; Leadley, David R; Parker, Evan H. C.; Whall, Terence E., Low frequency noise in Si and Si/SiGe/Si PMOSFETs, Journal of Telecommunications and Information Technology, 2007, nr 2 Jul 24, 2024

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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