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Title: The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon, Journal of Telecommunications and Information Technology, 2007, nr 3

Creator:

Beck, Romuald B. ; Ćwil, Michał ; Kalisz, Małgorzata ; Barcz, Adam

Date:

2007, nr 3

Resource Type:

artykuł

Description:

We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high-temperature thermal diffusion of boron into silicon. The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon fluoride (SiOF and SiF). Concentration of these components changes depending on the parameters of RIE process, i.e., rf power, gas pressure and etching time. The composition of this polymeric layer affects, in turn, boron thermal diffusion into silicon. With increasing rf power, the depth of boron junction is increased, while increasing time of etching process reduces boron diffusion into silicon.

Publisher:

Instytut Łączności - Państwowy Instytut Badawczy, Warszawa

Format:

application/pdf

Resource Identifier:

oai:bc.itl.waw.pl:280

DOI:

10.26636/jtit.2007.3.823

ISSN:

1509-4553

eISSN:

1899-8852

Source:

Journal of Telecommunications and Information Technology

Language:

ang

Rights Management:

Biblioteka Naukowa Instytutu Łączności

Subject and keywords:

fluorine boron thermal diffusion fluorocarbon plasma reactive ion etching silicon fluoride

Object collections:

Last modified:

Feb 25, 2026

In our library since:

Jan 25, 2010

Number of object content hits:

330

All available object's versions:

https://ribes-54.man.poznan.pl/publication/323

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Edition name Date
Kalisz, Małgorzata; Beck, Romuald B.; Barcz, Adam; Ćwil, Michał, The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon, Journal of Telecommunications and Information Technology, 2007, nr 3 Feb 25, 2026

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Instytut Łączności – Państwowy Instytut Badawczy ul. Szachowa 1 04-894 Warszawa

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